View AWT6172RM33P8_4318828.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

aWt6172 GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control
PreLIMINarY Data sHeet - rev 1.4
Features
* InGaP HBT Technology * Low profile 1.1 mm * Small Package Outline 6 mm x 6 mm * EGPRS Capable (class 12) * Integrated Reference Voltage GMsK MODe * Integrated power control (CMOS) * +35 dBm GSM850/900 Output Power * +33 dBm DCS/PCS Output Power * 55 % GSM850/900 PAE * 52 % DCS/PCS PAE * Power control range > 50 dB eDGe MODe * +28.5 dBm GSM850/900 Output Power * +27.5 dBm DCS/PCS Output Power * -66 dBc Typical ACPR (400 kHz) * -78 dBc Typical ACPR (600 kHz)
PrODuCt DesCrIPtION
This quad band power amplifier module supports dual, tri and quad band applications for both GMSK and 8-PSK modulation schemes. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. The module includes an integrated power control scheme for use in the GMSK mode. This facilitates fast and easy production calibration and reduces the number of external components required to complete a power control function. The amplifier's power control range is typically 55 dB, with the output power set by applying an analog voltage to VRAMP. In EDGE mode, the VRAMP pin is disabled and no specific voltage is required for proper operation. Output power is controlled by varying the input power. All of the RF ports for this device are internally matched to 50.
aPPLICatIONs
*
Dual/Tri/Quad Band Handsets, PDAs and Data Devices
DCS/PCS_IN
DCS/PCS_OUT
GSM850/900_IN
GSM850/900_OUT
Figure 1: Block Diagram
02/2009
aWt6172
DCS/PCS_IN BS
DCS/PCS_OUT
GSM850/900_IN
GSM850/900_OUT
Figure 2: Pinout (X - ray top view)
2
PRELIMINARY DATA SHEET - Rev 1.4 02/2009
aWt6172 table 1: Pin Description
PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 NaMe DCS/PCS_IN BS TX_EN VBATT VMODE VRAMP GSM850/900_IN VBIAS GND GND DesCrIPtION RF input to the DCS/PCS PA. There is a 175 shunt resistor before the DC blocking capacitor to set the input impedance Band select logic pin. Logic low selects the GSM PA and a logic high selects the DCS/PCS PA TX enable logic pin, a logic high will enable the PA Battery supply connection Logic pin for selection of GMSK or 8PSK (EDGE) mode. A logic low selects GMSK mode and a logic high selects the 8PSK mode Analog output power control pin RF input to GSM850/900 PA. VBIAS logic input. A logic low sets a low bias point for current savings at low power levels, a logic high sets a high bias point for meeting linearity perfomance up to the maximum specified linear ouptut power Ground Ground
GSM850/900_OUT RF output for GSM850/900 bands (DC blocked) GND GND GND GND GND DCS/PCS_OUT GND GND GND Ground Ground Ground Ground Ground RF output for DCS/PCS bands (DC blocked) Ground Ground Ground
PRELIMINARY DATA SHEET - Rev 1.4 02/2009
3
aWt6172
eLeCtrICaL CHaraCterIstICs
table 2: absolute Maximum ratings
ParaMeter Supply Voltage (VBATT) RF Input Power (RFIN) Control Voltage (VRAMP) Storage Temperature (TSTG) MIN -0.5 -0.3 -55 MaX +6 12 3.0 150 uNIts V dBm V C
stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. exposure to absolute ratings for extended periods of time may adversely affect reliability.
table 3: esD ratings
ParaMeter ESD Threshold voltage (RF ports) ESD Threshold voltage (control inputs) MetHOD HBM HBM ratING 2.5 2.5 uNIt kV kV
although protection circuitry has been designed into this device, proper precautions should be taken to avoid exposure to electrostatic discharge (esD) during handling and mounting. Human body model HBM employed is resistance = 1500, capacitance = 100pF.
table 4: Digital Inputs
ParaMeter
Logic High Voltage Logic Low Voltage Logic High Current Logic Low Current
sYMBOL
VIH VIL |IIH| |IIL|
MIN
1.2 -0.5 -
tYP
-
MaX
3.0 0.5 30 30
uNIts
V V A A
4
PRELIMINARY DATA SHEET - Rev 1.4 02/2009
aWt6172 table 5: Logic Control table
OPeratIONaL MODe GSM850/900 GMSK DCS/PCS GMSK GSM850/900 EDGE DCS/PCS EDGE GSM850/900 EDGE (Low Power Levels) (1) DCS/PCS EDGE (Low Power Levels) (2) PA DISABLED
Notes: (1) POUT +20 dBm. (2) POUT +19 dBm.
vMODe LOW LOW HIGH HIGH HIGH HIGH X
Bs LOW HIGH LOW HIGH LOW HIGH X
tX_eN HIGH HIGH HIGH HIGH HIGH HIGH LOW
vBIas X X HIGH HIGH LOW LOW X
NOtes VRAMP Controls Output Power, X = Don't Care VRAMP Controls Output Power, X = Don't Care VRAMP Control Disabled, Fixed Gain PA VRAMP Control Disabled, Fixed Gain PA VRAMP Control Disabled, Fixed Gain PA VRAMP Control Disabled, Fixed Gain PA X = Don't Care
PRELIMINARY DATA SHEET - Rev 1.4 02/2009
5
aWt6172 table 6: Operating ranges
ParaMeter
Case temperature Supply voltage Control voltage Power supply leakage current VRAMP Input Capacitance VRAMP Input Current Rise Time (TRISE) Fall Time (TFALL) Mode Switch VBIAS Switch Duty Cycle
sYMBOL
TC VBATT VRAMP VBATT = 4.5 V, VRAMP = 0 V, TX_EN = LOW No RF applied POUT = -10 dBm Y PMAX (within 0.2 dB) -
MIN
-20 3.2 0.25 -
tYP
3.6 3 0.4 0.5 0.4 -
MaX
85 4.5 2.2 5 10 1 1 1 1 50
uNIts
C V V A pF A s s s s %
POUT = PMAX Y -10 dBm (within 0.2 dB) GMSK Y EDGE EDGE Y GMSK
High Power Y Low Power Low Power Y High Power -
6
PRELIMINARY DATA SHEET - Rev 1.4 02/2009
aWt6172 table 7: electrical Characteristics for GsM850 GMsK Mode Unless otherwise specified: VBATT = 3.6 v, PIN = +2.0 dBm, Pulse Width =1154s, Duty Cycle 25%, ZIN = ZOUT = 50, tC = 25 C, vRAMP = 2.2 v, Bs = LOW, tX_eN = HIGH, vMODe = LOW
ParaMeter Operating Frequency Input Power Output Power, PMAX Degraded Output Power PAE @ PMAX Forward Isolation 1 Forward Isolation 2 Cross Isolation Fo @ DCS/PCS port 2Fo, 3Fo @ DCS/PCS port Harmonics Second Harmonic (2Fo) Third Harmonic (3Fo) 4Fo to 15Fo
( Fo )
MIN 824 0 34.5 32.5 47 -
tYP +2 35.1 33.5 54 -45 -28
MaX 849 +4 -30 -10
uNIt MHz dBm dBm dBm % dBm dBm
COMMeNts
VBATT = 3.2 V, TC = +85 C PIN = 0 dBm
TX_EN = LOW, PIN = +4 dBm TX_EN = HIGH, VRAMP = 0.25 V, PIN = +4 dBm POUT 34.5 dBm
-
-2 -22 -21 -20 -20
+2 -16 -10 -10 -8
dBm
dBm
POUT 34.5 dBm
Output Load VSWR = 6:1, All Phases POUT 34.5 dBm Stability (all spurious) Ruggedness RX Noise Power Input Return Loss -36 -30 dBm dBm FOUT < 1 GHz, RBW = 3 MHz FOUT > 1 GHz, RBW = 3 MHz Load VSWR = 10:1, All Phase Angles; POUT 34.5 dBm FTX = 849 MHz, RBW = 100 kHz FRX = 869 to 894 MHz, POUT < 34.5 dBm
No Degradation, No Damage -84 -81 2.5:1 dBm VSWR
PRELIMINARY DATA SHEET - Rev 1.4 02/2009
7
aWt6172 table 8: electrical Characteristics for GsM900 GMsK Mode Unless otherwise specified: VBATT = 3.6 v, PIN = +2.0 dBm, Pulse Width =1154s, Duty Cycle 25%, ZIN = ZOUT = 50, tC = 25 C, vRAMP = 2.2 v, Bs = LOW, tX_eN = HIGH, vMODe = LOW
ParaMeter Operating Frequency Input Power Output Power, PMAX Degraded Output Power PAE @ PMAX Forward Isolation 1 Forward Isolation 2 Cross Isolation Fo @ DCS/PCS port 2Fo, 3Fo @ DCS/PCS port Harmonics Second Harmonic (2Fo) Third Harmonic (3Fo) 4Fo to 15Fo
( Fo )
MIN 880 0 34.5 32.5 49 -
tYP +2 35.1 33.5 55 -45 -27
MaX 915 +4 -30 -10
uNIt MHz dBm dBm dBm % dBm dBm
COMMeNts
VBATT = 3.2 V, TC = +85 C PIN = 0 dBm
TX_EN = LOW, PIN = +4 dBm TX_EN = HIGH, VRAMP = 0.25 V, PIN = +4 dBm POUT 34.5 dBm
-
-2 -21 -21 -23 -20
+2 -16 -10 -10 -8
dBm
dBm
POUT 34.5 dBm
Output Load VSWR = 6:1, All Phases POUT 34.5 dBm Stability (all spurious) Ruggedness RX Noise Power 10 MHz Offset 20 MHz Offset Input Return Loss -36 -30 dBm dBm FOUT < 1 GHz, RBW = 3 MHz FOUT > 1 GHz, RBW = 3 MHz Load VSWR = 10:1, All Phase Angles; POUT 34.5 dBm FTX = 915 MHz, RBW = 100 kHz FRX = 925 to 935 MHz, POUT < 34.5 dBm FTX = 915 MHz, RBW = 100 kHz FRX = 935 to 960 MHz, POUT < 34.5 dBm
No Degradation, No Damage
-
-80 -84 -
-75 dBm -81 2.5:1 VSWR
8
PRELIMINARY DATA SHEET - Rev 1.4 02/2009
aWt6172 table 9: electrical Characteristics for GsM850 eDGe Mode Unless otherwise specified: VBATT = 3.6 v, Pulse Width =1154s, Duty Cycle 25% ZIN = ZOUT = 50, tC = 25 C, Bs = LOW, tX_eN = HIGH, vMODe = HIGH
ParaMeter Operating Frequency
( Fo )
MIN 824 28.5 20 26 17.5 29.0 24.0 -
tYP 31.5 28.5 -0.015 22 100 2 -38 -66 -79 -7 -50 -40 -35 -20
MaX 849 34.0 34.0 5 -33 -58 -64 0 -20 -20 -15 -10
uNIt MHz dBm VBIAS = High VBIAS = Low
COMMeNts
Linear POUT (High Power Mode) Linear POUT (Low Power Mode) Linear Degraded Output Power LD_POUT (High Power Mode) (1) LD_POUT (Low Power Mode) (2) Linear Gain (High Power Mode) Linear Gain (Low Power Mode) Gain Variation Power-Added Efficiency Icq (Low Power Mode) Error Vector Magnitude (EVM) Linearity ACPR1 ACPR2 ACPR3 Cross Isolation Fo @ DCS/PCS port 2Fo, 3Fo @ DCS/PCS port Harmonics Second Harmonic (2Fo) Third Harmonic (3Fo) 4Fo to 15Fo
dBm dB dB dB/oC % mA %
Meets ACPR and EVM limits specified under nominal conditions VBIAS = High VBIAS = Low -20 oC TC +85 oC POUT = 28.5 dBm VBIAS = Low
dBc
POUT < 28.5 dBm, BW = 30 kHz Fo 200 kHz Fo 400 kHz Fo 600 kHz
dBm
POUT < 28.5 dBm
dBm
POUT < 28.5 dBm
Output Load VSWR = 6:1 All Phases, POUT < 28.5 dBm Stability (all spurious) Ruggedness RX Noise Power Input Return Loss -36 -30 dBm dBm FOUT < 1 GHz, RBW = 3 MHz FOUT > 1 GHz, RBW = 3 MHz Load VSWR = 10:1, All Phase Angles; POUT 28.5 dBm FTX = 849 MHz, RBW = 100 kHz FRX = 869 to 894MHz, POUT < 28.5 dBm
No Degradation, No Damage -83 -80 dBm
2.5:1 VSWR
Notes: (1) VBIAS = High, VBATT = Range (3.2 V VBATT 4.5 V), Temp = Range (-20 oC TC +85 oC). (2) VBIAS = Low, VBATT = Range (3.2 V VBATT 4.5 V), Temp = Range (-20 oC TC +85 oC). PRELIMINARY DATA SHEET - Rev 1.4 02/2009
9
aWt6172 table 10: electrical Characteristics for GsM900 eDGe Mode Unless otherwise specified: VBATT = 3.6 v, Pulse Width =1154s, Duty Cycle 25% ZIN = ZOUT = 50, tC = 25 C, Bs = LOW, tX_eN = HIGH, vMODe = HIGH
ParaMeter Operating Frequency
( Fo )
MIN 880 28.5 20 26 17.5 29.0 24 -
tYP 32.0 29.0 -0.015 22 100 2 -36 -67 -79 -7 -50 -40 -35 -20
MaX 915 34.0 34 5 -33 -58 -64 0 -20 -20 -15 -10
uNIt MHz dBm VBIAS = High VBIAS = Low
COMMeNts
Linear POUT (High Power Mode) Linear POUT (Low Power Mode) Linear Degraded Output Power LD_POUT (High Power Mode) (1) LD_POUT (Low Power Mode) (2) Linear Gain (High Power Mode) Linear Gain (Low Power Mode) Gain Variation Power-Added Efficiency Icq (Low Power Mode) Error Vector Magnitude (EVM) Linearity ACPR1 ACPR2 ACPR3 Cross Isolation Fo @ DCS/PCS port 2Fo, 3Fo @ DCS/PCS port Harmonics Second Harmonic (2Fo) Third Harmonic (3Fo) 4Fo to 15Fo
dBm dB dB dB/oC % mA %
Meets ACPR and EVM limits specified under nominal conditions VBIAS = High VBIAS = Low -20 oC TC +85 oC POUT = 28.5 dBm VBIAS = Low
dBc
POUT < 28.5 dBm, BW = 30 kHz Fo 200 kHz Fo 400 kHz Fo 600 kHz
dBm
POUT < 28.5 dBm
dBm
POUT < 28.5 dBm
Output Load VSWR = 6:1 All Phases, POUT < 28.5 dBm Stability (all spurious) Ruggedness -36 -30 dBm dBm FOUT < 1 GHz, RBW = 3 MHz FOUT > 1 GHz, RBW = 3 MHz Load VSWR = 10:1, All Phase Angles; POUT 28.5 dBm
No Degradation, No Damage
Notes: (1) VBIAS = High, VBATT = Range (3.2 V VBATT 4.5 V), Temp = Range (-20 oC TC +85 oC). (2) VBIAS = Low, VBATT = Range (3.2 V VBATT 4.5 V), Temp = Range (-20 oC TC +85 oC).
10
PRELIMINARY DATA SHEET - Rev 1.4 02/2009
aWt6172 table 10: electrical Characteristics for GsM900 eDGe Mode (Continued) Unless otherwise specified: VBATT = 3.6 v, Pulse Width =1154s, Duty Cycle 25% ZIN = ZOUT = 50, tC = 25 C, Bs = LOW, tX_eN = HIGH, vMODe = HIGH
ParaMeter RX Noise Power 10 MHz Offset 20 MHz Offset Input Return Loss MIN tYP -80 -83 MaX -75 -80 2.5:1 VSWR uNIt dBm COMMeNts FTX = 915 MHz, RBW = 100 kHz FRX = 925 to 935 MHz, POUT < 28.5 dBm FTX = 915 MHz, RBW = 100 kHz FRX = 935 to 960 MHz, POUT < 28.5 dBm
PRELIMINARY DATA SHEET - Rev 1.4 02/2009
11
aWt6172 table 11: electrical Characteristics for DCs GMsK Mode Unless otherwise specified: VBATT = 3.6 v, PIN = +2.0 dBm, Pulse Width =1154s, Duty Cycle 25%, ZIN = ZOUT = 50, tC = 25 C, vRAMP = 2.2 v, Bs = HIGH, tX_eN = HIGH, vMODe =LOW
ParaMeter Operating Frequency Input Power Output Power, PMAX Degraded Output Power PAE @ PMAX Forward Isolation 1 Forward Isolation 2 Harmonics Second Harmonic (2FO) Third Harmonic (3FO) 4FO to 15FO MIN 1710 0 32 29.5 45 tYP +2 33 31 53 -40 -27 MaX 1785 +4 -30 -10 uNIt MHz dBm dBm dBm % dBm dBm TX_EN = LOW, PIN = +4 dBm TX_EN = HIGH, VRAMP = 0.25 V, PIN = +4 dBm VBATT = 3.2 V, TC = +85 C PIN = 0 dBm COMMeNts
-
-23 -28 -20
-10 -10 -8
dBm
POUT < 32 dBm
Output Load VSWR = 6:1 All Phases , POUT < 32dBm Stability (all spurious) Ruggedness RX Noise Power Input Return Loss -36 -30 dBm dBm FOUT < 1 GHz, RBW = 3 MHz FOUT > 1 GHz, RBW = 3 MHz Load VSWR = 10:1 All Phase Angles; POUT < 32dBm FTX = 1785 MHz, RBW = 100 kHz, FRX =1805 to 1880 MHz, POUT < 32 dBm
No Degradation, No Damage -87 -78 2.5:1 dBm VSWR
12
PRELIMINARY DATA SHEET - Rev 1.4 02/2009
aWt6172 table 12: electrical Characteristics for PCs GMsK Mode Unless otherwise specified: VBATT = 3.6 v, PIN = +2.0 dBm, Pulse Width =1154s, Duty Cycle 25%, ZIN = ZOUT = 50, tC = 25 C, vRAMP = 2.2 v, Bs = HIGH, tX_eN = HIGH, vMODe =LOW
ParaMeter Operating Frequency Input Power Output Power, PMAX Degraded Output Power PAE @ PMAX Forward Isolation 1 Forward Isolation 2 Harmonics Second Harmonic (2Fo) Third Harmonic (3Fo) 4Fo to 15Fo
( Fo )
MIN 1850 0 32 29.5 45 -
tYP +2 33 31 52 -38 -26
MaX 1910 +4 -30 -10
uNIt MHz dBm dBm dBm % dBm dBm
COMMeNts
VBATT = 3.2 V, TC = +85 C PIN = 0 dBm
TX_EN = LOW, PIN = +4 dBm TX_EN = HIGH, VRAMP = 0.25 V, PIN = +4 dBm
-
-25 -30 -20
-10 -10 -8
dBm
POUT 32 dBm
Output Load VSWR = 6:1, All POUT 32 dBm Stability (all spurious) Ruggedness RX Noise Power Input Return Loss -36 -30 dBm dBm FOUT < 1 GHz, RBW = 3 MHz FOUT > 1 GHz, RBW = 3 MHz Load VSWR = 10:1, All Phase Angles; POUT 32 dBm FTX = 1910 MHz, RBW = 100 kHz FRX = 1930 to 1990 MHz, POUT < 32 dBm
No Degradation, No Damage -88 -79 2.5:1 dBm VSWR
PRELIMINARY DATA SHEET - Rev 1.4 02/2009
13
aWt6172 table 13: electrical Characteristics for DCs eDGe Mode Unless otherwise specified: VBATT = 3.6 v, Pulse Width =1154s, Duty Cycle 25%, ZIN = ZOUT = 50, tC = 25 C , Bs =HIGH, tX_eN = HIGH, vMODe = HIGH
ParaMeter Operating Frequency
( Fo )
MIN 1710 27.5 19 25 16.5 34 30 -
tYP 37 36 -0.04 20 120 2 -39 -65 -78
MaX 1785 40 40 5 -33 -58 -64
uNIt MHz dBm VBIAS = High VBIAS = Low
COMMeNts
Linear POUT (High Power Mode) Linear POUT (Low Power Mode) Linear Degraded Output Power LD_POUT (High Power Mode) (1) LD_POUT (Low Power Mode) (2) Linear Gain (High Power Mode) Linear Gain (Low Power Mode) Gain Variation Power-Added Efficiency Icq (Low Power Mode) Error Vector Magnitude (EVM) Linearity ACPR1 ACPR2 ACPR3 Harmonics Second Harmonic (2Fo) Third Harmonic (3Fo) 4Fo to 7Fo
dBm dB dB dB/oC % mA %
Meets ACPR and EVM limits specified under nominal conditions VBIAS = High VBIAS = Low -20 oC TC +85 oC POUT = 27.5 dBm VBIAS = Low
dBc
POUT < 27.5 dBm, BW = 30 kHz Fo 200 kHz Fo 400 kHz Fo 600 kHz
-
-38 -47 -20
-20 -20 -10
dBm
POUT < 27.5 dBm
Output Load VSWR = 6:1 All Phases, POUT < 27.5 dBm Stability (all spurious) Ruggedness -36 -30 dBm dBm FOUT < 1 GHz, RBW = 3 MHz FOUT > 1 GHz, RBW = 3 MHz Load VSWR = 10:1, All Phase Angles; POUT 27.5 dBm FTX = 1785 MHz, RBW = 100 kHz FRX = 1805 to 1880 MHz POUT < 27.5 dBm
No Degradation, No Damage
RX Noise Power Input Return Loss
-
-81 -
-76
dBm
2.5:1 VSWR
Notes: (1) VBIAS = High, VBATT = Range (3.2 V VBATT 4.5 V), Temp = Range (-20 oC TC +85 oC). (2) VBIAS = Low, VBATT = Range (3.2 V VBATT 4.5 V), Temp = Range (-20 oC TC +85 oC).
14
PRELIMINARY DATA SHEET - Rev 1.4 02/2009
aWt6172 table 14: electrical Characteristics for PCs eDGe Mode Unless otherwise specified: VBATT = 3.6 v, Pulse Width =1154s, Duty Cycle 25%, ZIN = ZOUT = 50, tC = 25 C , Bs =HIGH, tX_eN = HIGH, vMODe = HIGH
ParaMeter Operating Frequency
( Fo )
MIN 1850 27.5 19 25 16.5 33.0 29 -
tYP 36 35 -0.044 20 120 2 -38 -64 -77
MaX 1910 39.5 39 5 -33 -57 -64
uNIt MHz dBm VBIAS = High VBIAS = Low
COMMeNts
Linear POUT (High Power Mode) Linear POUT (Low Power Mode) Linear Degraded Output Power LD_POUT (High Power Mode) (1) LD_POUT (Low Power Mode) (2) Linear Gain (High Power Mode) Linear Gain (Low Power Mode) Gain Variation Power-Added Efficiency Icq (Low Power Mode) Error Vector Magnitude (EVM) Linearity ACPR1 ACPR2 ACPR3 Harmonics Second Harmonic (2Fo) Third Harmonic (3Fo) 4Fo to 15Fo
dBm dB dB dB/oC % mA %
Meets ACPR and EVM limits specified under nominal conditions VBIAS = High VBIAS = Low -20 oC TC +85 oC POUT = 27.5 dBm VBIAS = Low
dBc
POUT < 27.5 dBm, BW = 30 kHz Fo 200 kHz Fo 400 kHz Fo 600 kHz
-
-40 -46 -20
-20 -20 -10
dBm
POUT < 27.5 dBm
Output Load VSWR = 6:1 All Phases, POUT < 27.5 dBm Stability (all spurious) Ruggedness RX Noise Power -36 -30 dBm dBm FOUT < 1 GHz, RBW = 3 MHz FOUT > 1 GHz, RBW = 3 MHz Load VSWR = 10:1, All Phase Angles; POUT 27.5 dBm FTX = 1910 MHz, RBW = 100 kHz FRX = 1930 to 1990 MHz POUT < 27.5 dBm
No Degradation, No Damage -82 -76 dBm
Input Return Loss
-
-
2.5:1 VSWR
Notes: (1) VBIAS = High, VBATT = Range (3.2 V VBATT 4.5 V), Temp = Range (-20 oC TC +85 oC). (2) VBIAS = Low, VBATT = Range (3.2 V VBATT 4.5 V), Temp = Range (-20 oC TC +85 oC).
PRELIMINARY DATA SHEET - Rev 1.4 02/2009
15
aWt6172
aPPLICatION INFOrMatION
DCS/PCS_IN
DCS/PCS_OUT
GSM850/900_IN
GSM850/900_OUT
Figure 3: recommended application Circuit
16
PRELIMINARY DATA SHEET - Rev 1.4 02/2009
aWt6172
PaCKaGe OutLINe
Figure 4: M33 Package Outline - 20 Pin 6 mm x 6 mm x 1.1 mm surface Mount Module
PRELIMINARY DATA SHEET - Rev 1.4 02/2009
17
aWt6172
Figure 5: recommended PCB Footprint
18
PRELIMINARY DATA SHEET - Rev 1.4 02/2009
aWt6172
Figure 5B: recommended PCB Footprint Notes
PRELIMINARY DATA SHEET - Rev 1.4 02/2009
19
aWt6172
OrDerING INFOrMatION
OrDer NuMBer AWT6172RM33P8 teMPerature raNGe -20 C to +85C PaCKaGe DesCrIPtION RoHS-compliant 20 Pin 6 mm x 6 mm x 1.1 mm Surface Mount Module RoHS-compliant 20 Pin 6 mm x 6 mm x 1.1 mm Surface Mount Module Halogen-free and RoHS-compliant 20 pin 6mm x 6mm x 1.1mm Surface Mount Module Halogen-free and RoHS-compliant 20 pin 6mm x 6mm x 1.1mm Surface Mount Module COMPONeNt PaCKaGING
Tape and Reel, 2500 pieces per reel
AWT6172RM33P9
-20 C to +85C
Partial Tape and Reel
AWT6172HM33P8
-20 C to +85C
Tape and Reel, 2500 pieces per reel
AWT6172HM33P9
-20 C to +85C
Partial Tape and Reel
aNaDIGICs, Inc.
141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com IMPOrtaNt NOtICe
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product's formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders.
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited.
WarNING
20
PRELIMINARY DATA SHEET - Rev 1.4 02/2009

▲Up To Search▲

Price & Availability of AWT6172RM33P8

	To Download AWT6172RM33P8 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .